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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 14 6.5 6.5 Single
S
FEATURES
- 50 0.28
* * * * * * *
Surface Mountable (Order As IRFR9020/SiHFR9020) Straight Lead Option (Order As IRFU9020/SiHFU9020) Repetitive Avalanche Ratings Dynamic dV/dt Rating Simple Drive Requirements Ease of Paralleling Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
DPAK (TO-252) IPAK (TO-251)
G
D P-Channel MOSFET
The Power MOSFET technology is the key to Vishay's advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. The Power MOSFET transistors also feature all of the well established advantages of MOSFET'S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of Power MOSFET's to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9020/SiHFR9020 is provided on 16mm tape. The straight lead option IRFR9020/SiHFR9020 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb Note a. See device orientation. DPAK (TO-252) IRFR9020PbF SiHFR9020-E3 IRFR9020 SiHFR9020 DPAK (TO-252) IRFR9020TRPbFa SiHFR9020T-E3a IRFR9020TRa SiHFR9020Ta DPAK (TO-252) IRFR9020TRLPbFa SiHFR9020TL-E3a IRFR9020TRLa SiHFR9020TLa IPAK (TO-251) IRFU9020PbF SiHFU9020-E3 IRFU9020 SiHFU9020
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90350 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 1 VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR LIMIT - 50 20 - 9.9 - 6.3 - 40 0.33 440 - 9.9 4.2 UNIT V
A W/C mJ A mJ
WORK-IN-PROGRESS
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER SYMBOL Maximum Power Dissipation TC = 25 C PD dV/dt Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, Starting TJ = 25 C, L = 5.1 mH, RG = 25 , Peak IL = - 9.9 A c. ISD - 9.9 A, dI/dt -120 A/s, VDD 40 V, TJ 150 C. d. 0.063" (1.6 mm) from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 42 5.8 - 55 to + 150 300d UNIT W V/ns C
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC MIN. TYP. 1.7 MAX. 110 3.0 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS Between lead, 6 mm (0.25") from package and center of die contact.
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VGS = 20 V VDS = max. rating, VGS = 0 V VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 C VGS = - 10 V ID = 5.7 Ab VDS - 50 V, IDS = - 5.7 A
- 50 - 2.0 2.3
0.20 3.5
- 4.0 500 250 1000 0.28 -
V V nA A S
VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 ID = - 9.7 A, VDS = 0.8 x max. rating, see fig. 16 (Independent operating temperature)
-
490 320 70 9.4 4.3 4.3 8.2 57 12 25 4.5 7.5
14 6.5 6.5 12 66 18 38 nH ns nC pF
VGS = - 10 V
VDD = - 25 V, ID = - 9.7 A, RG = 18 , RD = 2.4 , see fig. 15 (Independent operating temperature)
-
G
S
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Document Number: 90350 S-Pending-Rev. A, 10-Jun-08
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
56 0.17
110 0.34
- 9.9 A - 40 - 6.3 280 0.85 V ns nC
G
S
TJ = 25 C, IS = - 9.9 A, VGS = 0 Vb TJ = 25 C, IF = - 9,7 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width 300 s; duty cycle 2 %.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Document Number: 90350 S-Pending-Rev. A, 10-Jun-08
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Normalized On-Resistance vs. Temperature
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Document Number: 90350 S-Pending-Rev. A, 10-Jun-08
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 12 - Maximum Drain Current vs. Case Temperature
Document Number: 90350 S-Pending-Rev. A, 10-Jun-08
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 13b - Unclamped Inductive Test Circuit
IAS
VDS
IL VDD tp VDS
Fig. 13c - Unclamped Inductive Waveforms Fig. 13a - Maximum Avalanche vs. Starting Junction Temperature
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
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Document Number: 90350 S-Pending-Rev. A, 10-Jun-08
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
td(on) VGS 10 %
tr
td(off) tf
90 % VDS
Fig. 15a - Switching Time Waveforms
Fig. 15b - Switching Time Test Circuit
- 10 V QGS
QG
QGD
VG
Charge
Fig. 16a - Basic Gate Charge Waveform
Fig. 16b - Gate Charge Test Circuit
Document Number: 90350 S-Pending-Rev. A, 10-Jun-08
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
P.W. Period Ripple 5 %
D.U.T.
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
RG
Compliment N-Channel of D.U.T. for driver
Driver gate drive D=
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage Inductor current
Body diode forward drop
*
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 17 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?90350.
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+ + * dV/dt controlled by RG * ISD controlled by duty factor "D" * D.U.T. - device under test
+ - VDD
P.W. Period VGS = - 10 V*
VDD
ISD
Document Number: 90350 S-Pending-Rev. A, 10-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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